Difference between revisions of "20210430 photolitho"
From mn.fysikk.laglivlab
Dagkd@uio.no (talk | contribs) |
Dagkd@uio.no (talk | contribs) (Returned to the 30 april version that was destroyed due to a mistake.) |
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| − | * Started LAF-bench | + | * Started LAF-bench |
| − | * N2 valve had been left open, almost no pressure left! | + | * N2 valve had been left open, almost no pressure left! |
| − | * cleaned wafers with plasma only | + | * cleaned wafers with plasma only |
| − | * 1st wafer | + | * 1st wafer |
| − | ** 3700 RPM ~ 20 um | + | ** 3700 RPM ~ 20 um |
| − | ** prebake on programmable hot plate | + | ** prebake on programmable hot plate |
| − | ** | + | ** Masking with UV-Kub 2. UV at 11% intensity for 30 sec. |
| − | ** Hot plate too hot, 65C postbake happened at 72-66C | + | ** Hot plate too hot, 65C postbake happened at 72-66C |
| − | * 2nd wafer 3100 RPM ~ 25 um | + | ** The hot plate seems to take longer than the timer on my telephone. This needs to be checked! |
| − | ** prebake on VWR hot plate, no nice control of ramp in temp | + | ** development with PGMEA for 2:45 was too long time! Misjudged the residue and continued another 30s, then it was completely destroyed. |
| − | ** | + | * 2nd wafer 3100 RPM ~ 25 um |
| − | ** Postbake on VWR hotplate | + | ** prebake on VWR hot plate, no nice control of ramp in temp |
| + | ** Masking with UV-Kub 2. UV at 11% intensity for 30 sec. | ||
| + | ** Postbake on VWR hotplate | ||
| + | ** Developed 3min in PGMEA gave perfect sylinders and gaps between them. quick dip to remove a little residue and done. | ||
Latest revision as of 15:43, 3 May 2021
- Started LAF-bench
- N2 valve had been left open, almost no pressure left!
- cleaned wafers with plasma only
- 1st wafer
- 3700 RPM ~ 20 um
- prebake on programmable hot plate
- Masking with UV-Kub 2. UV at 11% intensity for 30 sec.
- Hot plate too hot, 65C postbake happened at 72-66C
- The hot plate seems to take longer than the timer on my telephone. This needs to be checked!
- development with PGMEA for 2:45 was too long time! Misjudged the residue and continued another 30s, then it was completely destroyed.
- 2nd wafer 3100 RPM ~ 25 um
- prebake on VWR hot plate, no nice control of ramp in temp
- Masking with UV-Kub 2. UV at 11% intensity for 30 sec.
- Postbake on VWR hotplate
- Developed 3min in PGMEA gave perfect sylinders and gaps between them. quick dip to remove a little residue and done.
