Difference between revisions of "20210503 photolitho"
From mn.fysikk.laglivlab
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* cleaned wafers with plasma only | * cleaned wafers with plasma only | ||
| − | * 1st wafer | + | * 1st wafer Dag's patterns |
| − | ** 3100 RPM ~ 25 um | + | ** 3100 RPM ~ 25 um, 1h rest |
| − | ** prebake on | + | ** prebake on VWR hot plate |
** Masking with UV-Kub 2. UV at 11% intensity for 30 sec. | ** Masking with UV-Kub 2. UV at 11% intensity for 30 sec. | ||
| − | ** 10 minutes rest | + | ** > 10 minutes rest |
** post bake on VWR plate | ** post bake on VWR plate | ||
| − | * 2nd wafer | + | ** > 10 minutes rest |
| − | ** 3100 RPM ~ 25 um | + | ** Developed 2:30 min in PGMEA, perfectly developed |
| − | ** prebake on | + | ** 2h hard bake at 135C |
| + | * 2nd wafer Anniken and Dag's patterns | ||
| + | ** 3100 RPM ~ 25 um, 1h rest | ||
| + | ** prebake on programmable hot plate | ||
** Masking with UV-Kub 2. UV at 11% intensity for 30 sec. | ** Masking with UV-Kub 2. UV at 11% intensity for 30 sec. | ||
| + | ** >10 minutes rest | ||
** Postbake on programmable hotplate | ** Postbake on programmable hotplate | ||
| − | ** Developed 2:30 min in PGMEA | + | ** 15 minutes rest |
| + | ** Developed 2:30 min in PGMEA. Overdeveloped! | ||
Latest revision as of 15:35, 3 May 2021
- cleaned wafers with plasma only
- 1st wafer Dag's patterns
- 3100 RPM ~ 25 um, 1h rest
- prebake on VWR hot plate
- Masking with UV-Kub 2. UV at 11% intensity for 30 sec.
- > 10 minutes rest
- post bake on VWR plate
- > 10 minutes rest
- Developed 2:30 min in PGMEA, perfectly developed
- 2h hard bake at 135C
- 2nd wafer Anniken and Dag's patterns
- 3100 RPM ~ 25 um, 1h rest
- prebake on programmable hot plate
- Masking with UV-Kub 2. UV at 11% intensity for 30 sec.
- >10 minutes rest
- Postbake on programmable hotplate
- 15 minutes rest
- Developed 2:30 min in PGMEA. Overdeveloped!
