Difference between revisions of "20210430 photolitho"
From mn.fysikk.laglivlab
Dagkd@uio.no (talk | contribs) |
Dagkd@uio.no (talk | contribs) |
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* 1st wafer | * 1st wafer | ||
** 3700 RPM ~ 20 um | ** 3700 RPM ~ 20 um | ||
− | ** prebake on | + | ** prebake on VWR plate |
** Masking with UV-Kub 2. UV at 11% intensity for 30 sec. | ** Masking with UV-Kub 2. UV at 11% intensity for 30 sec. | ||
− | ** | + | ** 10 minutes rest |
− | ** | + | ** post bake on VWR plate |
− | ** development with PGMEA for 2: | + | ** development with PGMEA for 2:30 |
* 2nd wafer 3100 RPM ~ 25 um | * 2nd wafer 3100 RPM ~ 25 um | ||
− | ** prebake on | + | ** prebake on programmable hot plate |
** Masking with UV-Kub 2. UV at 11% intensity for 30 sec. | ** Masking with UV-Kub 2. UV at 11% intensity for 30 sec. | ||
− | ** Postbake on | + | ** Postbake on programmable hotplate |
− | ** Developed | + | ** Developed 2:30 min in PGMEA |
Revision as of 13:14, 3 May 2021
- Started LAF-bench
- N2 valve had been left open, almost no pressure left!
- cleaned wafers with plasma only
- 1st wafer
- 3700 RPM ~ 20 um
- prebake on VWR plate
- Masking with UV-Kub 2. UV at 11% intensity for 30 sec.
- 10 minutes rest
- post bake on VWR plate
- development with PGMEA for 2:30
- 2nd wafer 3100 RPM ~ 25 um
- prebake on programmable hot plate
- Masking with UV-Kub 2. UV at 11% intensity for 30 sec.
- Postbake on programmable hotplate
- Developed 2:30 min in PGMEA