Difference between revisions of "20210430 photolitho"

Revision as of 13:32, 3 May 2021

Started LAF-bench
N2 valve had been left open, almost no pressure left!
cleaned wafers with plasma only
1st wafer
- 3700 RPM ~ 20 um
- prebake on VWR plate
- Masking with UV-Kub 2. UV at 11% intensity for 30 sec.
- postbake on VWR plate
2nd wafer
- 3100 RPM ~ 25 um
- prebake on programmable hot plate
- Masking with UV-Kub 2. UV at 11% intensity for 30 sec.
- Hot plate too hot, 65C postbake happened at 72-66C
- The hot plate seems to take longer than the timer on my telephone. This needs to be checked!
- development with PGMEA for 2:45 was too long time! Misjudged the residue and continued another 30s, then it was completely destroyed.

@@ Line 6: / Line 6: @@
 ** prebake on VWR plate
 **  Masking with UV-Kub 2. UV at 11% intensity for 30 sec.
-** 10 minutes rest
+** postbake on VWR plate
-** post bake on VWR plate
-** development with PGMEA for 2:30
 * 2nd wafer
 ** 3100 RPM ~ 25 um
 ** prebake on programmable hot plate
 **  Masking with UV-Kub 2. UV at 11% intensity for 30 sec.
-** Postbake on programmable hotplate
+** Hot plate too hot, 65C postbake happened at 72-66C
-** Developed 2:30 min in PGMEA
+** The hot plate seems to take longer than the timer on my telephone. This needs to be checked!
+** development with PGMEA for 2:45 was too long time! Misjudged the residue and continued another 30s, then it was completely destroyed.