Difference between revisions of "20210430 photolitho"
From mn.fysikk.laglivlab
Dagkd@uio.no (talk | contribs) |
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** prebake on programmable hot plate | ** prebake on programmable hot plate | ||
** Masking with UV-Kub 2. UV at 11% intensity for 30 sec. | ** Masking with UV-Kub 2. UV at 11% intensity for 30 sec. | ||
| − | ** Hot plate too hot, 65C postbake happened at | + | ** Hot plate too hot, 65C postbake happened at 72-66C |
* 2nd wafer 3100 RPM ~ 25 um | * 2nd wafer 3100 RPM ~ 25 um | ||
** prebake on VWR hot plate, no nice control of ramp in temp | ** prebake on VWR hot plate, no nice control of ramp in temp | ||
** Masking with UV-Kub 2. UV at 11% intensity for 30 sec. | ** Masking with UV-Kub 2. UV at 11% intensity for 30 sec. | ||
** Postbake on VWR hotplate | ** Postbake on VWR hotplate | ||
Revision as of 11:20, 30 April 2021
- Started LAF-bench
- N2 valve had been left open, almost no pressure left!
- cleaned wafers with plasma only
- 1st wafer
- 3700 RPM ~ 20 um
- prebake on programmable hot plate
- Masking with UV-Kub 2. UV at 11% intensity for 30 sec.
- Hot plate too hot, 65C postbake happened at 72-66C
- 2nd wafer 3100 RPM ~ 25 um
- prebake on VWR hot plate, no nice control of ramp in temp
- Masking with UV-Kub 2. UV at 11% intensity for 30 sec.
- Postbake on VWR hotplate
