Difference between revisions of "20210430 photolitho"
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Dagkd@uio.no (talk | contribs) |
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** Hot plate too hot, 65C postbake happened at 72-66C | ** Hot plate too hot, 65C postbake happened at 72-66C | ||
** The hot plate seems to take longer than the timer on my telephone. This needs to be checked! | ** The hot plate seems to take longer than the timer on my telephone. This needs to be checked! | ||
| + | ** development with PGMEA for 2:45 was too long time! Misjudged the residue and continued another 30s, then it was completely destroyed. | ||
* 2nd wafer 3100 RPM ~ 25 um | * 2nd wafer 3100 RPM ~ 25 um | ||
** prebake on VWR hot plate, no nice control of ramp in temp | ** prebake on VWR hot plate, no nice control of ramp in temp | ||
** Masking with UV-Kub 2. UV at 11% intensity for 30 sec. | ** Masking with UV-Kub 2. UV at 11% intensity for 30 sec. | ||
** Postbake on VWR hotplate | ** Postbake on VWR hotplate | ||
| + | ** Developed 3min in PGMEA gave perfect sylinders and gaps between them. quick dip to remove a little residue and done. | ||
Revision as of 13:02, 30 April 2021
- Started LAF-bench
- N2 valve had been left open, almost no pressure left!
- cleaned wafers with plasma only
- 1st wafer
- 3700 RPM ~ 20 um
- prebake on programmable hot plate
- Masking with UV-Kub 2. UV at 11% intensity for 30 sec.
- Hot plate too hot, 65C postbake happened at 72-66C
- The hot plate seems to take longer than the timer on my telephone. This needs to be checked!
- development with PGMEA for 2:45 was too long time! Misjudged the residue and continued another 30s, then it was completely destroyed.
- 2nd wafer 3100 RPM ~ 25 um
- prebake on VWR hot plate, no nice control of ramp in temp
- Masking with UV-Kub 2. UV at 11% intensity for 30 sec.
- Postbake on VWR hotplate
- Developed 3min in PGMEA gave perfect sylinders and gaps between them. quick dip to remove a little residue and done.
