Difference between revisions of "20210430 photolitho"

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Line 9: Line 9:
 
** post bake on VWR plate
 
** post bake on VWR plate
 
** development with PGMEA for 2:30
 
** development with PGMEA for 2:30
* 2nd wafer 3100 RPM ~ 25 um
+
* 2nd wafer  
 +
** 3100 RPM ~ 25 um
 
** prebake on programmable hot plate
 
** prebake on programmable hot plate
 
**  Masking with UV-Kub 2. UV at 11% intensity for 30 sec.
 
**  Masking with UV-Kub 2. UV at 11% intensity for 30 sec.
 
** Postbake on programmable hotplate
 
** Postbake on programmable hotplate
 
** Developed 2:30 min in PGMEA
 
** Developed 2:30 min in PGMEA

Revision as of 13:15, 3 May 2021

  • Started LAF-bench
  • N2 valve had been left open, almost no pressure left!
  • cleaned wafers with plasma only
  • 1st wafer
    • 3700 RPM ~ 20 um
    • prebake on VWR plate
    • Masking with UV-Kub 2. UV at 11% intensity for 30 sec.
    • 10 minutes rest
    • post bake on VWR plate
    • development with PGMEA for 2:30
  • 2nd wafer
    • 3100 RPM ~ 25 um
    • prebake on programmable hot plate
    • Masking with UV-Kub 2. UV at 11% intensity for 30 sec.
    • Postbake on programmable hotplate
    • Developed 2:30 min in PGMEA