Difference between revisions of "20210430 photolitho"
From mn.fysikk.laglivlab
Dagkd@uio.no (talk | contribs) |
Dagkd@uio.no (talk | contribs) |
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** post bake on VWR plate | ** post bake on VWR plate | ||
** development with PGMEA for 2:30 | ** development with PGMEA for 2:30 | ||
− | * 2nd wafer 3100 RPM ~ 25 um | + | * 2nd wafer |
+ | ** 3100 RPM ~ 25 um | ||
** prebake on programmable hot plate | ** prebake on programmable hot plate | ||
** Masking with UV-Kub 2. UV at 11% intensity for 30 sec. | ** Masking with UV-Kub 2. UV at 11% intensity for 30 sec. | ||
** Postbake on programmable hotplate | ** Postbake on programmable hotplate | ||
** Developed 2:30 min in PGMEA | ** Developed 2:30 min in PGMEA |
Revision as of 13:15, 3 May 2021
- Started LAF-bench
- N2 valve had been left open, almost no pressure left!
- cleaned wafers with plasma only
- 1st wafer
- 3700 RPM ~ 20 um
- prebake on VWR plate
- Masking with UV-Kub 2. UV at 11% intensity for 30 sec.
- 10 minutes rest
- post bake on VWR plate
- development with PGMEA for 2:30
- 2nd wafer
- 3100 RPM ~ 25 um
- prebake on programmable hot plate
- Masking with UV-Kub 2. UV at 11% intensity for 30 sec.
- Postbake on programmable hotplate
- Developed 2:30 min in PGMEA