Difference between revisions of "20210503 photolitho"
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Dagkd@uio.no (talk | contribs) |
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** prebake on programmable hot plate | ** prebake on programmable hot plate | ||
** Masking with UV-Kub 2. UV at 11% intensity for 30 sec. | ** Masking with UV-Kub 2. UV at 11% intensity for 30 sec. | ||
− | ** | + | ** 10 minutes rest |
− | ** | + | ** post bake on VWR plate |
− | + | * 2nd wafer | |
− | * 2nd wafer | ||
** 3100 RPM ~ 25 um | ** 3100 RPM ~ 25 um | ||
** prebake on VWR hot plate, no nice control of ramp in temp | ** prebake on VWR hot plate, no nice control of ramp in temp | ||
** Masking with UV-Kub 2. UV at 11% intensity for 30 sec. | ** Masking with UV-Kub 2. UV at 11% intensity for 30 sec. | ||
− | ** Postbake on | + | ** Postbake on programmable hotplate |
− | ** Developed | + | ** Developed 2:30 min in PGMEA |
Revision as of 13:32, 3 May 2021
- cleaned wafers with plasma only
- 1st wafer
- 3100 RPM ~ 25 um
- prebake on programmable hot plate
- Masking with UV-Kub 2. UV at 11% intensity for 30 sec.
- 10 minutes rest
- post bake on VWR plate
- 2nd wafer
- 3100 RPM ~ 25 um
- prebake on VWR hot plate, no nice control of ramp in temp
- Masking with UV-Kub 2. UV at 11% intensity for 30 sec.
- Postbake on programmable hotplate
- Developed 2:30 min in PGMEA