Difference between revisions of "20210503 photolitho"
From mn.fysikk.laglivlab
Dagkd@uio.no (talk | contribs) |
Dagkd@uio.no (talk | contribs) |
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** 10 minutes rest | ** 10 minutes rest | ||
** post bake on VWR plate | ** post bake on VWR plate | ||
| + | ** Developed 2:30 min in PGMEA | ||
* 2nd wafer | * 2nd wafer | ||
** 3100 RPM ~ 25 um | ** 3100 RPM ~ 25 um | ||
** prebake on VWR hot plate, no nice control of ramp in temp | ** prebake on VWR hot plate, no nice control of ramp in temp | ||
** Masking with UV-Kub 2. UV at 11% intensity for 30 sec. | ** Masking with UV-Kub 2. UV at 11% intensity for 30 sec. | ||
| + | ** 10 minutes rest | ||
** Postbake on programmable hotplate | ** Postbake on programmable hotplate | ||
** Developed 2:30 min in PGMEA | ** Developed 2:30 min in PGMEA | ||
Revision as of 13:39, 3 May 2021
- cleaned wafers with plasma only
- 1st wafer
- 3100 RPM ~ 25 um
- prebake on programmable hot plate
- Masking with UV-Kub 2. UV at 11% intensity for 30 sec.
- 10 minutes rest
- post bake on VWR plate
- Developed 2:30 min in PGMEA
- 2nd wafer
- 3100 RPM ~ 25 um
- prebake on VWR hot plate, no nice control of ramp in temp
- Masking with UV-Kub 2. UV at 11% intensity for 30 sec.
- 10 minutes rest
- Postbake on programmable hotplate
- Developed 2:30 min in PGMEA
