Difference between revisions of "20210505 photolitho"
From mn.fysikk.laglivlab
(Tag: Visual edit) |
(Tag: Visual edit) |
||
| Line 6: | Line 6: | ||
** post bake on VWR plate | ** post bake on VWR plate | ||
** > 10 minutes rest | ** > 10 minutes rest | ||
| − | ** Developed 3 min in PGMEA, | + | ** Developed 3+2+3 min in PGMEA, and 1 min in new PGMEA |
| − | ** | + | ** There was a big difference between the various patterns in how the small features were developed. The mask has probably not been pressed firmly enough on the substrate. |
* 2nd wafer | * 2nd wafer | ||
** 900 RPM (970 in program) ~ 100 um, 1h rest | ** 900 RPM (970 in program) ~ 100 um, 1h rest | ||
Revision as of 15:19, 5 May 2021
- cleaned wafers with plasma oDag's patterns
- 1700 RPM (1700 programmed) ~ 50 um, 1h rest
- prebake on VWR hot plate
- Masking with UV-Kub 2. UV at 25% intensity for 18 sec. Distance 680 um
- > 10 minutes rest
- post bake on VWR plate
- > 10 minutes rest
- Developed 3+2+3 min in PGMEA, and 1 min in new PGMEA
- There was a big difference between the various patterns in how the small features were developed. The mask has probably not been pressed firmly enough on the substrate.
- 2nd wafer
- 900 RPM (970 in program) ~ 100 um, 1h rest
- prebake on VWR hot plate
- Masking with UV-Kub 2. UV at 25% intensity for 22 sec. Distance 730um
- >10 minutes rest
- Postbake on VWR hotplate
- 10 minutes rest
- Developed 4 min in PGMEA.
