Difference between revisions of "20210505 photolitho"
From mn.fysikk.laglivlab
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(Tag: Visual edit) |
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** > 10 minutes rest | ** > 10 minutes rest | ||
** Developed 3+2+3 min in PGMEA, and 1 min in new PGMEA | ** Developed 3+2+3 min in PGMEA, and 1 min in new PGMEA | ||
| − | ** There was a big difference between the various patterns in how the small features were developed. The mask has probably not been pressed firmly enough on the substrate. | + | ** There was a big difference between the various patterns in how the small features were developed. The mask has probably not been pressed firmly enough on the substrate. The text read correctly, meaning the masks were inserted the correct way down. |
* 2nd wafer | * 2nd wafer | ||
** 900 RPM (970 in program) ~ 100 um, 1h rest | ** 900 RPM (970 in program) ~ 100 um, 1h rest | ||
Revision as of 15:20, 5 May 2021
- cleaned wafers with plasma oDag's patterns
- 1700 RPM (1700 programmed) ~ 50 um, 1h rest
- prebake on VWR hot plate
- Masking with UV-Kub 2. UV at 25% intensity for 18 sec. Distance 680 um
- > 10 minutes rest
- post bake on VWR plate
- > 10 minutes rest
- Developed 3+2+3 min in PGMEA, and 1 min in new PGMEA
- There was a big difference between the various patterns in how the small features were developed. The mask has probably not been pressed firmly enough on the substrate. The text read correctly, meaning the masks were inserted the correct way down.
- 2nd wafer
- 900 RPM (970 in program) ~ 100 um, 1h rest
- prebake on VWR hot plate
- Masking with UV-Kub 2. UV at 25% intensity for 22 sec. Distance 730um
- >10 minutes rest
- Postbake on VWR hotplate
- 10 minutes rest
- Developed 4 min in PGMEA.
