Difference between revisions of "20210310"
From mn.fysikk.laglivlab
Dagkd@uio.no (talk | contribs) (start) |
Dagkd@uio.no (talk | contribs) (continued) |
||
| Line 4: | Line 4: | ||
* Let out inside alu foil to thermalize | * Let out inside alu foil to thermalize | ||
* new wafer cleaned for dust with IP, plasma treated and then 160 C for 7-8 min | * new wafer cleaned for dust with IP, plasma treated and then 160 C for 7-8 min | ||
| − | * changed spin program to 970 rpm to achieve 890 rpm on the readout. | + | * changed spin program to 970 rpm to achieve 890 rpm on the readout -> 100 um thick layer. |
* transferred su8 from syringe | * transferred su8 from syringe | ||
* forgot to leave it some minutes on the wafer to thermalize before spinning | * forgot to leave it some minutes on the wafer to thermalize before spinning | ||
| Line 10: | Line 10: | ||
* leave for 10 minutes on spin coater | * leave for 10 minutes on spin coater | ||
* to keep the hot plate at 95C beyonf 99.9 min I programmed a third period: 40 + 80 min | * to keep the hot plate at 95C beyonf 99.9 min I programmed a third period: 40 + 80 min | ||
| + | * back 4 hours later due to a belated meeting | ||
| + | * turned the mask the other way because I checked once more which was up and it was confirmed by what I saw in the microscope | ||
| + | * transferred wafer to UV-KUB, had the light on for some seconds (big mistake) | ||
| + | * chose 600 um thickness to press mask onto wafer (see later: maybe not enough?) | ||
| + | * used 44s at 50% to have 1000 mJ/cm^2 | ||
| + | * post baked | ||
| + | * developing delayed 2-3 hours due to meeting (is this bad?) | ||
| + | * Same problem as before: | ||
| + | ** small structures are not removed by developer | ||
| + | ** differences on the wafer in how well small structures are developed | ||
| + | ** developed 5 min according to table, but no small structures developed | ||
| + | ** continued several rounds up to 11 min, from 8-9 min nothing seemed to change | ||
Latest revision as of 19:38, 11 March 2021
- Started with new SU8
- Took it out from the fridge at 09:00
- Transferred to a new syringe
- Let out inside alu foil to thermalize
- new wafer cleaned for dust with IP, plasma treated and then 160 C for 7-8 min
- changed spin program to 970 rpm to achieve 890 rpm on the readout -> 100 um thick layer.
- transferred su8 from syringe
- forgot to leave it some minutes on the wafer to thermalize before spinning
- spun for 60s at 890 rpm (readout)
- leave for 10 minutes on spin coater
- to keep the hot plate at 95C beyonf 99.9 min I programmed a third period: 40 + 80 min
- back 4 hours later due to a belated meeting
- turned the mask the other way because I checked once more which was up and it was confirmed by what I saw in the microscope
- transferred wafer to UV-KUB, had the light on for some seconds (big mistake)
- chose 600 um thickness to press mask onto wafer (see later: maybe not enough?)
- used 44s at 50% to have 1000 mJ/cm^2
- post baked
- developing delayed 2-3 hours due to meeting (is this bad?)
- Same problem as before:
- small structures are not removed by developer
- differences on the wafer in how well small structures are developed
- developed 5 min according to table, but no small structures developed
- continued several rounds up to 11 min, from 8-9 min nothing seemed to change
