20210505 photolitho

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  • cleaned wafers with plasma oDag's patterns
    • 1700 RPM (1700 programmed) ~ 50 um, 1h rest
    • prebake on VWR hot plate
    • Masking with UV-Kub 2. UV at 25% intensity for 18 sec. Distance 680 um
    • > 10 minutes rest
    • post bake on VWR plate
    • > 10 minutes rest
    • Developed 3+2+3 min in PGMEA, and 1 min in new PGMEA
    • There was a big difference between the various patterns in how the small features were developed. The mask has probably not been pressed firmly enough on the substrate.
  • 2nd wafer
    • 900 RPM (970 in program) ~ 100 um, 1h rest
    • prebake on VWR hot plate
    • Masking with UV-Kub 2. UV at 25% intensity for 22 sec. Distance 730um
    • >10 minutes rest
    • Postbake on VWR hotplate
    • 10 minutes rest
    • Developed 4 min in PGMEA.