20210503 photolitho
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Revision as of 13:13, 3 May 2021 by Dagkd@uio.no (talk | contribs) (Created page with "* cleaned wafers with plasma only * 1st wafer ** 3100 RPM ~ 25 um ** prebake on programmable hot plate ** Masking with UV-Kub 2. UV at 11% intensity for 30 sec. ** Hot plate...")
- cleaned wafers with plasma only
- 1st wafer
- 3100 RPM ~ 25 um
- prebake on programmable hot plate
- Masking with UV-Kub 2. UV at 11% intensity for 30 sec.
- Hot plate too hot, 65C postbake happened at 72-66C
- The hot plate seems to take longer than the timer on my telephone. This needs to be checked!
- development with PGMEA for 2:45 was too long time! Misjudged the residue and continued another 30s, then it was completely destroyed.
- 2nd wafer 3100 RPM ~ 25 um
- prebake on VWR hot plate, no nice control of ramp in temp
- Masking with UV-Kub 2. UV at 11% intensity for 30 sec.
- Postbake on VWR hotplate
- Developed 3min in PGMEA gave perfect sylinders and gaps between them. quick dip to remove a little residue and done.