20210430 photolitho

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  • Started LAF-bench
  • N2 valve had been left open, almost no pressure left!
  • cleaned wafers with plasma only
  • 1st wafer
    • 3700 RPM ~ 20 um
    • prebake on VWR plate
    • Masking with UV-Kub 2. UV at 11% intensity for 30 sec.
    • 10 minutes rest
    • post bake on VWR plate
    • development with PGMEA for 2:30
  • 2nd wafer
    • 3100 RPM ~ 25 um
    • prebake on programmable hot plate
    • Masking with UV-Kub 2. UV at 11% intensity for 30 sec.
    • Postbake on programmable hotplate
    • Developed 2:30 min in PGMEA