Difference between revisions of "20220308 photolitho"
From mn.fysikk.laglivlab
Dagkd@uio.no (talk | contribs) |
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* Hot plate started heating too early, relaxation after spinning only 5-10 min | * Hot plate started heating too early, relaxation after spinning only 5-10 min | ||
* 15 min @ 65 C, 120 min @ 95 C, started 10:30 | * 15 min @ 65 C, 120 min @ 95 C, started 10:30 | ||
| + | * The surfaces are not completely flat. Probably due to too little relaxation! | ||
| + | * Exposed 45 s @ 20% of full intensity | ||
| + | * Returned to hot plate for 15 min @ 65 C, 40 min @ 95 C, started 13:35 | ||
Revision as of 14:36, 8 March 2022
Started 08:30 following procedure.
- New box of 3" wafers, cleaned 2 wafers with IP and N2,
- plasma cleaning ~3 min (100 on timer setting) 100%
- on VWR hot plate 09:30 set to 150C, 10 min
- SU8 from syringe (40 ml left)
- Spread at 400, 40s, set 1760, reading 1690 40s -> 50 um
- 2 small dust specs on second wafer, 1st wafer seemed fine
- Put on to programmable hot plate
- Hot plate started heating too early, relaxation after spinning only 5-10 min
- 15 min @ 65 C, 120 min @ 95 C, started 10:30
- The surfaces are not completely flat. Probably due to too little relaxation!
- Exposed 45 s @ 20% of full intensity
- Returned to hot plate for 15 min @ 65 C, 40 min @ 95 C, started 13:35
