20210713 lithography

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Revision as of 13:43, 13 July 2021 by Janmal@uio.no (talk | contribs) (Passaging)

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Lithography

We prepared 2 50um silicon wafers.

- Followed the procedure for 50um wafers. Pre-baked at 65 degrees C for 15 min and then at 95 degrees C for 120 min. We did not have a way to adjust the ramping of the temperature of the heating plate, so we just let the wafer sit on the plate until it heated to the necessary temperature.

Passaging

- We passaged once again. P-44

- Today we only replaced the growth medium, and did nothing else with the flask. There were very few cells in the flask, if any at all. :(